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| FDC2612 February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features * 1.1 A, 200 V. RDS(ON) = 725 m @ VGS = 10 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching speed * Low gate charge (8nC typical) Applications * DC/DC converter D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 200 20 (Note 1a) Units V V A W C 1.1 4 1.6 0.8 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 C/W C/W Package Marking and Ordering Information Device Marking .262 Device FDC2612 Reel Size 7'' Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDC2612 Rev B3 (W) FDC2612 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 200 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 160 V, VGS = 20 V, VGS = -20 V , VGS = 0 V VDS = 0 V VDS = 0 V 2 4 -8.7 605 1133 4 4.4 234 18 8 6 6 17 8 VDS = 100 V, VGS = 10 V ID = 1.1 A, 8 1.6 2.2 1.3 0.8 74.5 194 1.2 12 12 30 16 11 725 1430 246 1 100 -100 4.5 mV/C A nA nA V mV/C m A S pF pF pF ns ns ns ns nC nC nC A V nS nC On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 1.1 A VGS = 10 V, ID = 1.1 A, TJ = 125C VGS = 10 V, VDS = 10 V VDS = 10 V, VDS = 100 V, f = 1.0 MHz ID = 1.1 A V GS = 0 V, Dynamic Characteristics Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 100 V, VGS = 10 V, ID = 1 A, RGEN = 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A(Note 2) Voltage Diode Reverse Recovery Time IF = 1.1A, (Note 2) diF/dt = 300 A/s Diode Reverse Recovery Charge Notes: 1.RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1in2 pad of 2 oz copper b) 156C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC2612 Rev B3(W) FDC2612 Typical Characteristics 4 1.4 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.5V 1.3 VGS = 4.0V ID, DRAIN CURRENT (A) 3 1.2 2 5.5V 1.1 4.5V 5.0V 6.0V 10V 1 1 0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) 0.9 0 1 2 ID, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 RDS(ON), ON-RESISTANCE (OHM) 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 o ID = 1.1A VGS =10V ID = 0.6A 1.3 1.1 TA = 125oC 0.9 0.7 TA = 25oC 0.5 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = 25V ID, DRAIN CURRENT (A) 6 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 TA = 125oC 0.1 4 25oC 0.01 TA = 125oC 2 -55oC 25oC -55oC 0.001 0 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC2612 Rev B3(W) FDC2612 Typical Characteristics 15 VGS, GATE-SOURCE VOLTAGE (V) 350 ID = 1.1A 12 VDS = 50V 100V 300 CISS 150V CAPACITANCE (pF) 250 200 150 100 f = 1MHz VGS = 0 V 9 6 3 50 COSS CRSS 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 0 0 25 50 75 100 125 150 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 40 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 1 100s 1ms 10ms 100ms 1s 30 SINGLE PULSE RJA = 156C/W TA = 25C 0.1 VGS = 10V SINGLE PULSE RJA = 156oC/W TA = 25 C 0.001 0.1 1 o DC 20 0.01 10 10 100 1000 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 156C/W 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC2612 Rev B3(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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